Platform Overview
Technology Platform: AN350 – 350nm thick Silicon Nitride (SiN) layer
Wafer Size: 200mm industrial platform
Architecture: SiN-loaded waveguides with Thin-Film Lithium Niobate (TFLN) overlay
Optical Performance
Platform Specifications
- Optical Loss: < 0.5 dB/m (SiN waveguides)
- Resonator Q Factor: > 20 million
- On-chip Modulator Loss: < 0.7 dB
- Operating Bands: C-band, O-band, L-band
- Wavelength Range: Visible to mid-infrared (leveraging SiN transparency window)
- High-Speed Modulation: Up to 100 GHz capability
- Low speed modulation: Down to kilohertz modulation speed with high fidelity
Physical Structure
Material Properties
- SiN Layer Thickness: 350 nm (AN350 platform), 800 nm (AN800 platform)
- TFLN Configuration: Slab overlay on SiN waveguides
- Material flexibility: TFLN, MgO-TFLN, TFLT available
- Waveguide Architecture: SiN guides optical mode, LN provides electro-optic effect
- RF Electrode Materials: Available (specific materials under DKLA)
Integration Details
- SiN-TFLN Coupling: Adiabatic taper transitions provided as PDK black-box components
- Transition Loss: Low-loss coupling (specific values available under DKLA)
- Back Reflection: Minimized through optimized transition design
Electrical Characteristics
Phase Shifters
- Thermo-optic Phase Shift: < 15mW per π phase shift demonstrated
- Operating Stability: Prolonged operation without failure
- Temperature Range: Standard operation (cryogenic compatibility confirmed)
RF Performance
- On-chip RF Termination: Available
- Termination Resistance: Proprietary material (black box available)
- High-Frequency Operation: Designed for 100+ GHz applications
Reliability & Qualification
Current Status
- Stress Testing: Thermo-optic phase shifters qualified for >4π operation
Manufacturing Quality
- Wafer-scale Uniformity: Industrial 200mm platform ensures high uniformity
Lithium Niobate PDK Components
Available Building Blocks
- Intensity Modulators: Electro-optic modulators with standardized interfaces
- Phase Modulators: Electro-optic modulators with standardized interface
- Transitions: SiN-TFLN adiabatic taper interfaces
- RF Terminations: On-chip termination structures
Design Features
- Black-box Components: Fully characterized, ready-to-use building blocks
- SiN Compatibility: Compatibility with AN350 and AN800 SiN PDK library
- Standardized Interfaces: Consistent design rules across all components
Process Capabilities
Fabrication Details
- LN Processing: LN integrated on CMOS fabricated wafers
- Waveguide Strategy: SiN-loaded approach (LN remains as slab)
- Patterning: Advanced lithography on 200mm wafers
- Material Integration: Heterogeneous SiN-TFLN integration
Advanced Options
- Custom Geometries: Available on demand
- Multi-layer Structures: Supported on platform
Applications-Specific Performance
Quantum Computing
- Switch Networks: Fast, low-loss switching capability
- Phase Stability: Suitable for quantum coherence requirements
High-Speed Communication
- Bandwidth: 100+ GHz modulation capability
- Signal Integrity: Low insertion loss, minimal distortion
- Multi-band Operation: C, O, and L-band compatibility
Sensing Applications
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- Phase Sensitivity: High-precision phase modulation
- Optical loss: Low end to end optical loss
Space Applications
- SWaP: Reduced modulator size, weight and power
Technical Support & Documentation
Available Resources
- PDK Documentation: Comprehensive design kit with characterized components
- Application Notes: Specific guidance for different use cases
- Simulation Models: Verified models for design optimization
- Layout Guidelines: Best practices for optimal performance
Access Requirements
- Detailed Specifications: Available under NDA
- Performance Maps: Wafer-scale uniformity data under NDA
- Yield Information: Manufacturing data for qualified projects
- Custom Characterization: Available for dedicated development projects
For detailed specifications, performance maps, and technical discussions, please contact our sales team at [email protected]. All proprietary technical data is shared under appropriate non-disclosure agreements.